NIF62514
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Clamped Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
(V GS = 0 Vdc, I D = 250 m Adc, T J = 150 ° C) (Note 4)
Zero Gate Voltage Drain Current
(V DS = 32 Vdc, V GS = 0 Vdc)
(V DS = 32 Vdc, V GS = 0 Vdc, T J = 150 ° C) (Note 4)
Gate Input Current
(V GS = 5.0 Vdc, V DS = 0 Vdc)
(V GS = ? 5.0 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
42
42
?
?
?
?
46
45
0.5
2.0
50
550
50
50
2.0
10
100
1000
Vdc
m Adc
m Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = 150 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 5)
(V GS = 10 Vdc, I D = 1.4 Adc, T J @ 25 ° C)
(V GS = 10 Vdc, I D = 1.4 Adc, T J @ 150 ° C) (Note 4)
Static Drain ? to ? Source On ? Resistance (Note 5)
(V GS = 5.0 Vdc, I D = 1.4 Adc, T J @ 25 ° C)
(V GS = 5.0 Vdc, I D = 1.4 Adc, T J @ 150 ° C) (Note 4)
Source ? Drain Forward On Voltage
(I S = 7 A, V GS = 0 V)
V GS(th)
R DS(on)
R DS(on)
V SD
1.0
?
?
?
?
?
?
1.7
4.0
90
165
105
185
1.05
2.0
?
100
190
120
210
?
Vdc
mV/ ° C
m W
m W
V
SWITCHING CHARACTERISTICS (Note 4)
Turn ? on Delay Time
Turn ? on Rise Time
Turn ? off Delay Time
Turn ? off Fall Time
Slew ? Rate On
Slew ? Rate Off
10% V in to 10% I D
R L = 4.7 W , V in = 0 to 10 V, V DD = 12 V
10% I D to 90% I D
R L = 4.7 W , V in = 0 to 10 V, V DD = 12 V
90% V in to 90% I D
R L = 4.7 W , V in = 10 to 0 V, V DD = 12 V
90% I D to 10% I D
R L = 4.7 W , V in = 10 to 0 V, V DD = 12 V
R L = 4.7 W ,
V in = 0 to 10 V, V DD = 12 V
R L = 4.7 W ,
V in = 10 to 0 V, V DD = 12 V
t d(on)
t rise
t d(off)
t fall
? dV DS /dt on
dV DS /dt off
?
?
?
?
?
?
4.0
11
32
27
1.5
0.6
8.0
20
50
50
2.5
1.0
m s
m s
m s
m s
m s
m s
SELF PROTECTION CHARACTERISTIC S (T J = 25 ° C unless otherwise noted)
Current Limit
Current Limit
Temperature Limit (Turn ? off) (Note 4)
Temperature Hysteresis (Note 4)
Temperature Limit (Turn ? off) (Note 4)
Temperature Hysteresis (Note 4)
(V GS = 5.0 Vdc)
(V GS = 5.0 Vdc, T J = 150 ° C) (Note 4)
(V GS = 10 Vdc)
(V GS = 10 Vdc, T J = 150 ° C) (Note 4)
V GS = 5.0 Vdc
V GS = 5.0 Vdc
V GS = 10 Vdc
V GS = 10 Vdc
I LIM
I LIM
T LIM(off)
D T LIM(on)
T LIM(off)
D T LIM(on)
6.0
3.0
7.0
4.0
150
?
150
?
9.0
5.0
10.5
7.5
175
15
165
15
11
8.0
13
10
200
?
185
?
Adc
Adc
° C
° C
° C
° C
ESD ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Electro ? Static Discharge Capability
Electro ? Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
ESD
4000
400
?
?
?
?
V
V
4. Not subject to production testing.
5. Pulse Test: Pulse Width = 300 m s, Duty Cycle = 2%.
http://onsemi.com
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